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CS45N06A4 - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

suitable for use as a load switch and PWM applications.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤16mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS45N06A4
Manufacturer CR Micro
File Size 751.09 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS45N06A4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET ○R CS45N06 A4 anGeneral Description： CS45N06 A4 the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-252, which accords with the RoHS standard.