CS50N12A4 Description
： CS50N12 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology VD SS ID PD ( TC=25℃) which reduce the conduction loss, improve switching RD S(O N)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard.