Datasheet Summary
Silicon N-Channel Power MOSFET
○R
CS50N12 A4
General Description：
CS50N12 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology
VD SS
ID PD ( TC=25℃) which reduce the conduction loss, improve switching RD S(O N)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard.
F e atures：
15 mΩ
- Fast Switching
- Low ON Resistance(Rdson ≤ 2 0 m Ω)
- Low Gate Charge
- Low Reverse transfer capacitances(Typical:112.9pF)
- 100% Single Pulse avalanche energy Test
Applic...