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Silicon N-Channel Power MOSFET
○R
CS50N12 A4
General Description：
CS50N12 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology
VD SS
ID PD ( TC=25℃)
which reduce the conduction loss, improve switching RD S(O N)Typ
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the RoHS standard.
F e atures：
120
V
50
A
83
W
15 mΩ
Fast Switching Low ON Resistance(Rdson ≤ 2 0 m Ω) Low Gate Charge Low Reverse transfer capacitances(Typical:112.9pF) 100% Single Pulse avalanche energy Test
Applic ations：
Pow er s witch circuit of adaptor and c harger.
CS50N12A4 Datasheet
