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CS5N10A23-G - Silicon N-Channel Power MOSFET

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Part number CS5N10A23-G
Manufacturer CR Micro
File Size 782.21 KB
Description Silicon N-Channel Power MOSFET
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Description

CS5N10 A23-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy.This device is suitable for use as a load switch and PWM applications.The package form is SOT-223, which accords with the RoHS standard.

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