CS5N10AQ2-G-1 Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS5N10 AQ2-G-1 General Description： CS5N10 AQ2-G-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is DFN3- 3-8L, which accords with the RoHS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤230mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. VDSS ID PD RDS(ON)Typ 100 V 9.6 W 180...