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Silicon N-Channel Power MOSFET
○R
CS5N90F A9R
General Description：
VDSS
900
CS5N90F A9R, the silicon N-channel Enhanced ID
5
VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃)
32
which reduce the conduction loss, improve switching
RDS(ON)Typ
2.2
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤2.5Ω) l Low Gate Charge (Typical Data: 30.1nC) l Low Reverse transfer capacitances(Typical:6.4pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS5N90FA9R Datasheet
