CS5N90FA9R - Silicon N-Channel Power MOSFET

CR Micro

General Description

performance and enhance the avalanche energy.

Key Features

l Fast Switching l Low ON Resistance(Rdson≤2.5Ω) l Low Gate Charge (Typical Data: 30.1nC) l Low Reverse transfer capacitances(Typical:6.4pF) l 100% Single Pulse avalanche energy Test.

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CS5N90FA9R silicon n-channel power mosfet by CR Micro - Datasheet Preview

Datasheet Details

Part number	CS5N90FA9R
Manufacturer	CR Micro
File Size	363.80 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS5N90FA9R Datasheet

Full PDF Text Transcription for CS5N90FA9R (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS5N90FA9R. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET ○R CS5N90F A9R General Description： VDSS 900 CS5N90F A9R, the silicon N-channel Enhanced ID 5 VDMOSFETs, is obtained by the self-aligned pl...

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N-channel Enhanced ID 5 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 32 which reduce the conduction loss, improve switching RDS(ON)Typ 2.2 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤2.5Ω) l Low Gate Charge (Typical Data: 30.1nC) l Low Reverse transfer capacitances(Typical:6.4pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor

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