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CS60N12A8 - Silicon N-Channel Power MOSFET

General Description

CS60N12 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • VDSS ID PD(TC=25℃) RDS(ON)Typ 120 V 60 A 198 W 15 mΩ l Fast Switching l Low ON Resistance(Rdson≤20mΩ) l Low Gate Charge l Low Reverse transfer capacitances(Typical:112.9pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS60N12A8
Manufacturer CR Micro
File Size 421.27 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS60N12A8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET ○R CS60N12 A8 General Description： CS60N12 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： VDSS ID PD(TC=25℃) RDS(ON)Typ 120 V 60 A 198 W 15 mΩ l Fast Switching l Low ON Resistance(Rdson≤20mΩ) l Low Gate Charge l Low Reverse transfer capacitances(Typical:112.9pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.