CS60N20ANR Overview
： CS60N20 ANR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P, which accords with the RoHS standard.
CS60N20ANR Key Features
- Fast Switching
- Low ON Resistance(Rdson≤46mΩ)
- Low Gate Charge (Typical Data: 56.9nC)
- Low Reverse transfer capacitances(Typical:46pF)
- 100% Single Pulse avalanche energy Test