CS65N25ANR Overview
Description
： VDSS 250 CS65N25 ANR, the silicon N-channel Enhanced ID 65 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 420 which reduce the conduction loss, improve switching RDS(ON)Typ 42 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
Key Features
- Fast Switching
- Low ON Resistance(Rdson≤50mΩ)
- Low Gate Charge (Typical Data:90.1nC)
- Low Reverse transfer capacitances(Typical:44 pF)
- 100% Single Pulse avalanche energy Test
