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CS6N80A4R - Silicon N-Channel Power MOSFET

General Description

CS6N80 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:28.4nC) l Low Reverse transfer capacitances(Typical:4.7pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 800 V 6 A 180 W 1.8 Ω.

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Datasheet Details

Part number CS6N80A4R
Manufacturer CR Micro
File Size 421.25 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS6N80A4R Datasheet

Full PDF Text Transcription for CS6N80A4R (Reference)

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Silicon N-Channel Power MOSFET ○R CS6N80 A4R General Description： CS6N80 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology ...

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Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:28.4nC) l Low Reverse transfer capacitances(Typical:4.7pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 800 V 6 A 180 W 1.8 Ω Applications： Power switch circuit of ad

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