CS70N30ANR Overview
Description
： CS70N30 ANR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
Key Features
- Fast Switching
- Low ON Resistance(Rdson≤42mΩ)
- Low Gate Charge (Typical Data: 136.2nC)
- Low Reverse transfer capacitances(Typical: 107pF)
- 100% Single Pulse avalanche energy Test 300 V 70 A 250 W 36 mΩ
