Datasheet4U Logo Datasheet4U.com

CS70N30ANR - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤42mΩ).
  • Low Gate Charge (Typical Data: 136.2nC).
  • Low Reverse transfer capacitances(Typical: 107pF).
  • 100% Single Pulse avalanche energy Test 300 V 70 A 250 W 36 mΩ.

📥 Download Datasheet

Datasheet Details

Part number CS70N30ANR
Manufacturer CR Micro
File Size 744.95 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS70N30ANR Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CS70-B2GA101KYNS Disk Ceramic Capacitors TDK
CS70-B2GA151KYNS Disk Ceramic Capacitors TDK
CS70-B2GA221KYNS Disk Ceramic Capacitors TDK
CS7054 Low Side PWM FET Controller Cherry Semiconductor Corporation
CS7054 Low Side PWM FET Controller ON Semiconductor

Other Datasheets by CR Micro

Part Number Description
CS70N30AKR-G Silicon N-Channel Power MOSFET
CS70N06A4 Silicon N-Channel Power MOSFET
CS70N20AKR Silicon N-Channel Power MOSFET
CS7N03AE-1 Silicon N-Channel Power MOSFET
CS7N10AQ2-1 Silicon N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon N-Channel Power MOSFET ○R CS70N30 ANR General Description： CS70N30 ANR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P （N）, which accords with the RoHS standard.. Features：  Fast Switching  Low ON Resistance(Rdson≤42mΩ)  Low Gate Charge (Typical Data: 136.2nC)  Low Reverse transfer capacitances(Typical: 107pF)  100% Single Pulse avalanche energy Test 300 V 70 A 250 W 36 mΩ Applications： Power switch circuit of electron ballast and adaptor.