CS7N10AQ2-1 Description
： CS7N10 AQ2-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ 100 V 7 A 16.8 W 113 mΩ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications.. The package form is DFN3×3-8L, which accords with the RoHS standard..