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CS7R50A4RDP-G - Silicon N-Channel Power MOSFET

General Description

CS7R50 A4RDP-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤1.3Ω).
  • Low Gate Charge (Typical Data:19.7 nC).
  • Low Reverse transfer capacitances(Typical: 3.5pF).
  • 100% Single Pulse avalanche energy Test.
  • Halogen Free VDSS ID PD(TC=25℃) RDS(ON)Typ 500 V 7 A 79 W 1.1 Ω.

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Datasheet Details

Part number CS7R50A4RDP-G
Manufacturer CR Micro
File Size 806.40 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS7R50A4RDP-G Datasheet

Full PDF Text Transcription for CS7R50A4RDP-G (Reference)

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Silicon N-Channel Power MOSFET ○R CS7R50 A4RDP-G General Description： CS7R50 A4RDP-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Tec...

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channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤1.3Ω)  Low Gate Charge (Typical Data:19.7 nC)  Low Reverse transfer capacitances(Typical: 3.5pF)  100% Single Pulse avalanche energy Test  Halogen Free VDSS ID PD(TC=25℃) RDS(ON)Typ 500 V 7 A 79 W 1.1 Ω Applications： Po

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