CS80N08A4 - Silicon N-Channel Power MOSFET

CR Micro

General Description

CS80N08 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

Fast Switching.
Low ON Resistance(Rdson≤8.5mΩ).
Low Gate Charge (Typical Data:59.8nC).
Low Reverse transfer capacitances(Typical:237pF).
100% Single Pulse avalanche energy Test.

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CS80N08A4 silicon n-channel power mosfet by CR Micro - Datasheet Preview

Datasheet Details

Part number	CS80N08A4
Manufacturer	CR Micro
File Size	636.75 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS80N08A4 Datasheet

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Silicon N-Channel Power MOSFET ○R CS80N08 A4 General Description： CS80N08 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS ID（Silicon limited current） ID（Package limited） PD(TC=25℃) RDS(ON)Typ can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤8.5mΩ)  Low Gate Charge (Typical Data:59.8nC)  Low Reverse transfer capacitances(Typical:237pF)  100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.