CS80N08A4 Overview
Description
： CS80N08 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS ID（Silicon limited current） ID（Package limited） PD(TC=25℃) RDS(ON)Typ can be used in various power switching circuit for system miniaturization and higher efficiency.
Key Features
- Fast Switching
- Low ON Resistance(Rdson≤8.5mΩ)
- Low Gate Charge (Typical Data:59.8nC)
- Low Reverse transfer capacitances(Typical:237pF)
- 100% Single Pulse avalanche energy Test
