CS80N08A4 Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS80N08 A4 General Description： CS80N08 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS ID（Silicon limited current） ID（Package limited） PD(TC=25℃) RDS(ON)Typ can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features ： - Fast Switching - Low ON Resistance(Rdson≤8.5mΩ) - Low Gate Charge (Typical Data:59.8nC) - Low Reverse transfer capacitances(Typical:237pF) - 100% Single Pulse...