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CS90N03A8 - Silicon N-Channel Power MOSFET

Datasheet Summary

Description

CS90N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This device is suitable for use as a load switch and PWM applications.

Features

  • l Fast Switching l Low ON Resistance(Rdson≤5.5 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS90N03A8
Manufacturer CR Micro
File Size 456.41 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS90N03A8 Datasheet
Additional preview pages of the CS90N03A8 datasheet.

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Full PDF Text Transcription

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Silicon N-Channel Power MOSFET ○R CS90N03 A8 General Description： CS90N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤5.5 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise specified） VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ 30 V 90 A 60 A 53 W 3.
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