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Silicon N-Channel Power MOSFET
CS90N03 B3
○R
General Description：
CS90N03 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
VDSS ID PD(TC=25℃) RDS(ON)Typ
25 90 80 4.8
switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit
for system miniaturization and higher efficiency. The
package form is TO-251, which accords with the RoHS
standard.
Features：
l Trench FET Power MOSFET l Low ON Resistance(Rdson≤6mΩ) l Low Gate Charge (Typical Data:34nC) l Low Reverse transfer capacitances(Typical:291pF) l 100% Single Pulse avalanche energy Test
Applications：
Automotive,DC Motor Control and Class D Amplifier.
CS90N03B3 Datasheet
