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HGB028N04A - Silicon N-Channel Power MOSFET

General Description

HGB028N04A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson@10v≤2.8mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test 40 V 150 A 90 A 96 W 2.2 mΩ.

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Datasheet Details

Part number HGB028N04A
Manufacturer CR Micro
File Size 395.32 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HGB028N04A Datasheet

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Silicon N-Channel Power MOSFET ○R HGB028N04A General Description： HGB028N04A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ suitable for use as a load switch and PWM applications. The package form is TO-263, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson@10v≤2.8mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test 40 V 150 A 90 A 96 W 2.2 mΩ Applications： Power switch circuit of adaptor and charger.