HGB028N04A Overview
： HGB028N04A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ suitable for use as a load switch and PWM applications. The package form is TO-263, which accords with the RoHS standard.