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HGD065NE4A - Silicon N-Channel Power MOSFET

Datasheet Summary

Description

HGD065NE4A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This device is suitable for use as a load switch and PWM applications.

Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤6.5mΩ).
  • Low Gate Charge.
  • Low Reverse transfer capacitances.
  • 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number HGD065NE4A
Manufacturer CR Micro
File Size 791.02 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HGD065NE4A Datasheet
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Silicon N-Channel Power MOSFET ○R HGD065NE4A General Description： HGD065NE4A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-252, which accords with the RoHS standard. VDSS ID PD RDS(ON)Typ VGS=10V 45 V 60 A 39 W 5.2 mΩ Features：  Fast Switching  Low ON Resistance(Rdson≤6.5mΩ)  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.
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