HGD09N06A-G - Silicon N-Channel Power MOSFET

Datasheet Summary

Description

HGD09N06A-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This device is suitable for use as a load switch and PWM applications.

CR Micro

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Datasheet Details

Part number	HGD09N06A-G
Manufacturer	CR Micro
File Size	776.79 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HGD09N06A-G Datasheet
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Silicon N-Channel Power MOSFET ○R HGD09N06A-G General Description： HGD09N06A-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-252, which accords with the RoHS standard. VD SS ID PD RD S ( O N)Typ VGS=10V 60 V 55 A 59.5 W 8.1 mΩ F e atures：  Fast Switching  Low ON Resistance( Rdson ≤ 9 . 8 mΩ)  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test  Halogen Free Applic ations： Pow er s witch circuit of adaptor and c harger.

Published: Dec 8, 2024 |