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HGD09N06A-G - Silicon N-Channel Power MOSFET

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Part number HGD09N06A-G
Manufacturer CR Micro
File Size 776.79 KB
Description Silicon N-Channel Power MOSFET
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Description

HGD09N06A-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Fast Switching Low ON Resistance( Rdson ≤ 9 . Low Gate C

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