HGD10N04A Datasheet Text
Silicon N-Channel Power MOSFET HGD10N04A
General Description：
VDSS
ID（Silicon limited current）
HGD10N04A, the silicon N-channel Enhanced VDMOSFETs, is
ID（Package limited） obtained by the high density Trench technology which reduce the PD conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as A load switch and RDS(ON)Typ
PWM applications. the package form is TO-252, which accords with the RoHS standard.
Features
：
- Fast Switching
- Low ON Resistance
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
®
45
V
50
A
30
A
41.2 W
9 mΩ
Absolute（Tj= 25℃ unless otherwise specified）
Symbol
Parameter
VDSS
Drain-to-Source Voltage...