Datasheet Details
| Part number | HGE090N06A |
|---|---|
| Manufacturer | CR Micro |
| File Size | 788.82 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
 HGE090N06A Datasheet
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| Part number | HGE090N06A |
|---|---|
| Manufacturer | CR Micro |
| File Size | 788.82 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
HGE090N06A Datasheet
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VDSS 60 V HGE090N06A, the silicon N-channel Enhanced VDMOSFETs, ID 14 A is obtained by the high density Trench technology which reduce PD(Ta=25℃) 3.1 W the conduction loss, improve switching performance and enhance RDS(ON) Typ@Vgs=10V 8.5 mΩ the avalanche energy.The transistor can be used in various power RDS(ON) Typ@Vgs=4.5V 11 mΩ switching circuit for system miniaturization and higher efficiency.The package form is SOP8, which accords with the RoHS standard.
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