HGE090N06A Overview
Description
： VDSS 60 V HGE090N06A, the silicon N-channel Enhanced VDMOSFETs, ID 14 A is obtained by the high density Trench technology which reduce PD(Ta=25℃) 3.1 W the conduction loss, improve switching performance and enhance RDS(ON) Typ@Vgs=10V 8.5 mΩ the avalanche energy. The transistor can be used in various power RDS(ON) Typ@Vgs=4.5V 11 mΩ switching circuit for system miniaturization and higher efficiency.
Key Features
- Fast Switching
- Low ON Resistance
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test
- Halogen Free
