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Silicon N-Channel Power MOSFET
○R
HGE090N06A
General Description：
VDSS
60
V
HGE090N06A, the silicon N-channel Enhanced VDMOSFETs, ID
14
A
is obtained by the high density Trench technology which reduce PD(Ta=25℃)
3.1
W
the conduction loss, improve switching performance and enhance RDS(ON) Typ@Vgs=10V 8.5
mΩ
the avalanche energy. The transistor can be used in various power
RDS(ON) Typ@Vgs=4.5V
11
mΩ
switching circuit for system miniaturization and higher efficiency.
The package form is SOP8, which accords with the RoHS
standard.
Features：
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Halogen Free
Applications：
Power switch circuit of adaptor and charger.
HGE090N06A Datasheet
