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Silicon N-Channel Power MOSFET
○R
HGP022N04B-G
General Description：
HGP022N04B-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is
VDSS ID (Silicon Limited) ID(Package Limited) PD RDS(ON)Typ
suitable for use as a load switch and PWM applications. The
package form is TO-220AB, which accords with the RoHS
standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤2.2mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free
Applications：
Power switch circuit of adaptor and charger.
40 V 200 A 120 A 150.6 W 1.
HGP022N04B-G Datasheet
