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HGP026N03A - Silicon N-Channel Power MOSFET

General Description

HGP026N03A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This device is suitable for use as A load switch and PWM applications.

Key Features

  • Fast Switching.
  • Low ON Resistance.
  • Low Gate Charge.
  • Low Reverse transfer capacitances.
  • 100% Single Pulse avalanche energy Test VDSS ID（Silicon limited） ID（Package limited） PD RDS(ON)Typ.

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Datasheet Details

Part number HGP026N03A
Manufacturer CR Micro
File Size 665.32 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HGP026N03A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET HGP026N03A General Description： HGP026N03A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as A load switch and PWM applications. the package form is TO-220AB, which accords with the RoHS standard. Features： ● Fast Switching ● Low ON Resistance ● Low Gate Charge ● Low Reverse transfer capacitances ● 100% Single Pulse avalanche energy Test VDSS ID（Silicon limited） ID（Package limited） PD RDS(ON)Typ Applications： Power switch circuit of adaptor and charger. ® 30 V 170 A 90 A 104.