Datasheet4U Logo Datasheet4U.com

HGP028N04A - Silicon N-Channel Power MOSFET

General Description

HGP028N04A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson@10v≤2.8mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.

📥 Download Datasheet

Datasheet Details

Part number HGP028N04A
Manufacturer CR Micro
File Size 400.47 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HGP028N04A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon N-Channel Power MOSFET ○R HGP028N04A General Description: HGP028N04A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is VDSS ID(Silicon limited current) ID(Package limited) PD RDS(ON)Typ suitable for use as a load switch and PWM applications. The package form is TO-220AB, which accords with the RoHS standard. Features: l Fast Switching l Low ON Resistance(Rdson@10v≤2.8mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. 40 V 150 A 90 A 96 W 2.