HGP065NE4A
HGP065NE4A is Silicon N-Channel Power MOSFET manufactured by CR Micro.
Silicon N-Channel Power MOSFET
○R
General Description：
HGP065NE4A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching
VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-220AB, which accords with the RoHS standard.
Features
：
- Fast Switching
- Low ON Resistance(Rdson≤6.5mΩ)
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
E-cigarette,Electric Tool
Absolute（Tj=...
