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HGQ018N03A - Silicon N-Channel Power MOSFET

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Part number HGQ018N03A
Manufacturer CR Micro
File Size 856.32 KB
Description Silicon N-Channel Power MOSFET
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Description

HGQ018N03A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.This device is suitable for use as a load switch and PWM applications.The package form is PDFN5 6, which accords with the RoHS standard.

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