HGQ018N03A - Silicon N-Channel Power MOSFET

CR Micro

General Description

performance and enhance the avalanche energy.

suitable for use as a load switch and PWM applications.

Key Features

Fast Switching.
Low ON Resistance(Rdson≤1.8mΩ).
Low Gate Charge.
Low Reverse transfer capacitances.
100% Single Pulse avalanche energy Test.

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HGQ018N03A silicon n-channel power mosfet by CR Micro - Datasheet Preview

Datasheet Details

Part number	HGQ018N03A
Manufacturer	CR Micro
File Size	856.32 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HGQ018N03A Datasheet

Full PDF Text Transcription for HGQ018N03A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HGQ018N03A. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET ○R HGQ018N03A General Description： HGQ018N03A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology ...

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Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is PDFN5*6, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤1.8mΩ)  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.

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