HGQ022N03A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Key Features
l Fast Switching l Low ON Resistance(Rdson≤2.2mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.
Full PDF Text Transcription for HGQ022N03A (Reference)
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Silicon N-Channel Power MOSFET ○R HGQ022N03A General Description： HGQ022N03A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology ...
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Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is VDSS ID (Silicon Limited) ID(Package Limited) PD RDS(ON)Typ suitable for use as a load switch and PWM applications. The package form is PDFN5*6, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤2.2mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.
HGQ022N03A Datasheet
