HGQ065NE4A Overview
： HGQ065NE4A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is PDFN5 6, which accords with the RoHS standard.
HGQ065NE4A Key Features
- Fast Switching
- Low ON Resistance(Rdson≤6.5mΩ)
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test