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HGQ09N06A Datasheet Silicon N-channel Power MOSFET

Manufacturer: CR Micro

Overview: Silicon N-Channel Power MOSFET ○R HGQ09N06A General.

Datasheet Details

Part number HGQ09N06A
Manufacturer CR Micro
File Size 1.24 MB
Description Silicon N-Channel Power MOSFET
Datasheet HGQ09N06A-CRMicro.pdf

General Description

: HGQ09N06A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy.

This device is suitable for use as a load switch and PWM applications.

The package form is PDFN5×6, which accords with the RoHS standard.

Key Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤9.8mΩ).
  • Low Gate Charge.
  • Low Reverse transfer capacitances.
  • 100% Single Pulse avalanche energy Test.

HGQ09N06A Distributor