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HGQ09N06A - Silicon N-Channel Power MOSFET

Description

performance and enhance the avalanche energy.

suitable for use as a load switch and PWM applications.

Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤9.8mΩ).
  • Low Gate Charge.
  • Low Reverse transfer capacitances.
  • 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number HGQ09N06A
Manufacturer CR Micro
File Size 1.24 MB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HGQ09N06A Datasheet
Additional preview pages of the HGQ09N06A datasheet.

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Full PDF Text Transcription

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Silicon N-Channel Power MOSFET ○R HGQ09N06A General Description： HGQ09N06A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is PDFN5×6, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤9.8mΩ)  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.
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