HGQ09N06A - Silicon N-Channel Power MOSFET

Product Overview

CR Micro

Datasheet Details

Part number	HGQ09N06A
Manufacturer	CR Micro
File Size	1.24 MB
Description	Silicon N-Channel Power MOSFET
Datasheet	HGQ09N06A Datasheet
Additional preview pages of the HGQ09N06A datasheet.

Product details

Description

HGQ09N06A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy.This device is suitable for use as a load switch and PWM applications.The package form is PDFN5×6, which accords with the RoHS standard.

Features

Fast Switching.
Low ON Resistance(Rdson≤9.8mΩ).
Low Gate Charge.
Low Reverse transfer capacitances.
100% Single Pulse avalanche energy Test.

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Published: Dec 8, 2024 |