HGU09N06A-G Overview
： HGU09N06A-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-251, which accords with the RoHS standard.
HGU09N06A-G Key Features
- Fast Switching
- Low ON Resistance(Rdson≤9.8mΩ)
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test
- Halogen Free