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HGU09N06A-G - Silicon N-Channel Power MOSFET

Datasheet Summary

Description

HGU09N06A-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This device is suitable for use as a load switch and PWM applications.

Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤9.8mΩ).
  • Low Gate Charge.
  • Low Reverse transfer capacitances.
  • 100% Single Pulse avalanche energy Test.
  • Halogen Free.

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Datasheet preview – HGU09N06A-G

Datasheet Details

Part number HGU09N06A-G
Manufacturer CR Micro
File Size 777.66 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HGU09N06A-G Datasheet
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Silicon N-Channel Power MOSFET ○R HGU09N06A-G General Description： HGU09N06A-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-251, which accords with the RoHS standard. VDSS ID PD RDS(ON)Typ VGS=10V 60 V 55 A 59.5 W 8.1 mΩ Features：  Fast Switching  Low ON Resistance(Rdson≤9.8mΩ)  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test  Halogen Free Applications： Power switch circuit of adaptor and charger.
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