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C3M0060065K - Silicon Carbide Power MOSFET

Key Features

  • Package 650 V 37 A 60 mΩ.
  • 3rd Generation SiC MOSFET technology TAB Drain.
  • High blocking voltage with low on-resistance.
  • High speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant Benefits.
  • Higher system efficiency.
  • Reduced cooling requirements.
  • Increased power density.
  • Increased system switching frequency.
  • Easy to parallel and simp.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VDS C3M0060065K Silicon Carbide Power MOSFET TM C3M MOSFET Technology ID @ 25˚C RDS(on) N-Channel Enhancement Mode Features Package 650 V 37 A 60 mΩ • 3rd Generation SiC MOSFET technology TAB Drain • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency • Easy to parallel and simple to drive • Enable new hard switching PFC topologies (Totem-Pole) Applications • EV charging • Server power supplies • Solar PV inverters • UPS • DC/DC converters 1 234 D SSG Part Number C3M0060065K Drain (Pin 1, TAB) Gate (Pin 4) Driver S