Datasheet Summary
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
ID @ 25˚C RDS(on)
N-Channel Enhancement Mode
Features
Package
650 V 37 A 60 mΩ
- 3rd Generation SiC MOSFET technology
TAB Drain
- High blocking voltage with low on-resistance
- High speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant
Benefits
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency
- Easy to parallel and simple to drive
- Enable new hard switching PFC topologies (Totem-Pole) Applications
- EV charging
- Server power supplies
- Solar PV inverters
-...
