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C3M0060065D - Silicon Carbide Power MOSFET

Key Features

  • Package.
  • 3rd Generation SiC MOSFET technology.
  • High blocking voltage with low on-resistance.
  • High speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant Benefits.
  • Higher system efficiency.
  • Reduced cooling requirements.
  • Increased power density.
  • Increased system switching frequency.
  • Easy to parallel and simple to drive.
  • Enable new.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VDS 650 V C3M0060065D ID @ 25˚C 29 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 60 mΩ N-Channel Enhancement Mode Features Package • 3rd Generation SiC MOSFET technology • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency • Easy to parallel and simple to drive • Enable new hard switching PFC topologies (Totem-Pole) Applications • EV charging • Server power supplies • Solar PV inverters • UPS • DC/DC converters Part Number C3M0060065D Package TO-247-3 Marking C3M0060065D Maximum Ratings Symbo