CPMF-1200-S160B Datasheet PDF - CREE Silicon Carbide MOSFET Specs

CPMF-1200-S160B - Silicon Carbide MOSFET

Datasheet Summary

Features

MOSFET Package VDS RDS(on) Qg = 1200 V = 160 mΩ = 47 nC.
Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive D D Gate Source Source Benefits G G.
Higher System Efficiency Reduced Cooling Requirements Avalanche Ruggedness Increase System Switching Frequency DIE S S Part Number CPMF-1200-S160B Package DIE.

Datasheet Details

Part number	CPMF-1200-S160B
Manufacturer	CREE
File Size	800.70 KB
Description	Silicon Carbide MOSFET
Datasheet	CPMF-1200-S160B Datasheet
Additional preview pages of the CPMF-1200-S160B datasheet.

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Full PDF Text Transcription

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www.DataSheet.co.kr CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die Features MOSFET Package VDS RDS(on) Qg = 1200 V = 160 mΩ = 47 nC • • • • • Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive D D Gate Source Source Benefits G G • • • • Higher System Efficiency Reduced Cooling Requirements Avalanche Ruggedness Increase System Switching Frequency DIE S S Part Number CPMF-1200-S160B Package DIE Applications • • • Solar Inverters Motor Drives Military and Aerospace Maximum Ratings Symbol Parameter Continuous Drain Current Value 26.1 14.7 56 1.1 400 10 -5/+25 177.

Published: Dec 17, 2011 |