Datasheet4U Logo Datasheet4U.com

UGF09030 - 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

📥 Download Datasheet

Datasheet preview – UGF09030

Datasheet Details

Part number UGF09030
Manufacturer CREE
File Size 175.92 KB
Description 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
Datasheet download datasheet UGF09030 Datasheet
Additional preview pages of the UGF09030 datasheet.

📁 Similar Datasheet

  • UGF1004G - Isolated Ultra Fast Rectifiers (Taiwan Semiconductor)
  • UGF1004G - 10 Ampere Insulated Common Cathode Ultra Fast Recovery Half Bridge Rectifiers (Thinki Semiconductor)
  • UGF1004G - Ultra Fast Rectifiers (JGD)
  • UGF1004GD - 10 Ampere Insulated Tandem Polarity Ultra Fast Recovery Half Bridge Rectifiers (Thinki Semiconductor)
  • UGF1004GS - 10 Ampere Insulated Series Connection Ultra Fast Recovery Half Bridge Rectifiers (Thinki Semiconductor)
  • UGF1005G - Isolated Ultra Fast Rectifiers (Taiwan Semiconductor)
  • UGF1005G - 10 Ampere Insulated Common Cathode Ultra Fast Recovery Half Bridge Rectifiers (Thinki Semiconductor)
  • UGF1005G - Ultra Fast Rectifiers (JGD)
  • UGF1005GD - 10 Ampere Insulated Tandem Polarity Ultra Fast Recovery Half Bridge Rectifiers (Thinki Semiconductor)
  • UGF1005GS - 10 Ampere Insulated Series Connection Ultra Fast Recovery Half Bridge Rectifiers (Thinki Semiconductor)
Other Datasheets by CREE
  • UGF09085 - RF Power N-Channel Enhancement-Mode Lateral MOSFET
  • UGF18060 - Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
  • UGF27025 - 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

Full PDF Text Transcription

Click to expand full text
UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation. • ALL GOLD metal system for highest reliability • Industry standard package • Suggested alternative to the MRF9030 • Internally matched for repeatable manufacturing • High gain, high efficiency and high linearity • Application Specific Performance, 870MHz GSM: 30 Watts 17.50dB EDGE: 13 Watts 17.50dB IS95 CDMA: 3.5 Watts 17.50 dB CDMA2000: TBD Watts 17.
Published: |