• Part: UGF09030
  • Description: 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
  • Category: MOSFET
  • Manufacturer: Cree
  • Size: 175.92 KB
Download UGF09030 Datasheet PDF
Cree
UGF09030
UGF09030 is 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET manufactured by Cree.
30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation. - ALL GOLD metal system for highest reliability - Industry standard package - Suggested alternative to the MRF9030 - Internally matched for repeatable manufacturing - High gain, high efficiency and high linearity - Application Specific Performance, 870MHz GSM: 30 Watts 17.50dB EDGE: 13 Watts 17.50dB IS95 CDMA: 3.5 Watts 17.50 dB CDMA2000: TBD Watts 17.50dB Package Type 440095...