UGF18060
Overview
UGF18060 60W, 1.8 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.88 GHz. Rated with a minimum output ...
| Part | UGF18060 |
|---|---|
| Description | Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET |
| Category | MOSFET |
| Manufacturer | Cree |
| Size | 107.59 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |