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UGF18060 - Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

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UGF18060 60W, 1.8 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.88 GHz. Rated with a minimum output power of 60W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation. • ALL GOLD metal system for highest reliability • Industry standard package • Suggested alternative to the MRF18060 • Internally matched for repeatable manufacturing • High gain, high efficiency and high linearity • Application Specific Performance, 1.88 GHz GSM: 60 Watts 12.5 dB EDGE: 25 Watts 12.5 dB IS95 CDMA: 7.5 Watts 12.5 dB CDMA2000: TBD Watts 12.5 dB Package Type 440171 PN: UGF18060F Package Type 440172 PN: UGF18060P Rev 2.