UGF18060
UGF18060 is Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET manufactured by Cree.
60W, 1.8 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
Designed for DCS base station applications in the frequency band 1.805 to 1.88 GHz. Rated with a minimum output power of 60W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation.
- ALL GOLD metal system for highest reliability
- Industry standard package
- Suggested alternative to the MRF18060
- Internally matched for repeatable manufacturing
- High gain, high efficiency and high linearity
- Application Specific Performance, 1.88 GHz
GSM:
60 Watts
12.5 dB
EDGE:
25 Watts
12.5 dB
IS95 CDMA:
7.5 Watts 12.5 dB
CDMA2000:
TBD Watts 12.5 dB
Package Type...
