UGF18060 is Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET manufactured by Cree.
| Part Number | Description |
|---|---|
| UGF09030 | 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET |
| UGF09085 | RF Power N-Channel Enhancement-Mode Lateral MOSFET |
| UGF27025 | 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET |
UGF18060 60W, 1.8 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.88 GHz. Rated with a minimum output power of 60W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation.
