• Part: UPF1010
  • Description: Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS
  • Manufacturer: Cree
  • Size: 224.97 KB
Download UPF1010 Datasheet PDF
UPF1010 page 2
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Datasheet Summary

UPF1010 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers in Class A or AB operation. - Industry standard package. - Low intermodulation distortion of- 30dBc at 10W (PEP). .. - Gold Metalization, Gold Bond Wires, Gold-Plated Packages. Package Type 440095 UPF1010F Package Type 440109 UPF1010P 4-1 Maximum Ratings Rating Drain to Source Voltage, gate connected to source .. Gate to Source Voltage Total Device Dissipation @...