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UPF1030 - Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS

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Datasheet Details

Part number UPF1030
Manufacturer CREE
File Size 368.26 KB
Description Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS
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UPF1030 30W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation. www.DataSheet4U.com • • • ALL GOLD metal system for highest reliability. Industry standard package. Low intermodulation distortion of –30dBc at 30W (PEP). Package Type 440095 PN: UPF1030F Package Type 440134 PN: UPF1030P Page 1 of 10 UPF1030 Rev. 2 UPF1030 Maximum Ratings Rating Drain to Source Voltage, gate connected to source Gate to Source Voltage Total Device Dissipation @ Tcase = 70oC Derate above 70oC Storage Temperature Range Operating Junction Temperature www.
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