• Part: UPF1030
  • Description: Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS
  • Manufacturer: Cree
  • Size: 368.26 KB
Download UPF1030 Datasheet PDF
UPF1030 page 2
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UPF1030 page 3
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Datasheet Summary

30W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation. .. - - - ALL GOLD metal system for highest reliability. Industry standard package. Low intermodulation distortion of - 30dBc at 30W (PEP). Package Type 440095 PN: UPF1030F Package Type 440134 PN: UPF1030P Page 1 of 10 UPF1030 Rev. 2 Maximum Ratings Rating Drain to Source Voltage, gate connected to source Gate to Source Voltage Total Device...