CRMEEH0606A Description
Features l -60V, -95A RDS(ON) Typ = 7.3mΩ @ VGS = -10V D l Advanced Split Gate Trench Technology l Excellent RDS(ON) and Low Gate Charge s l 100% UIS TESTED! Power MOSFET (TJ = 25°C unless otherwise specified) Symbol Parameter Conditions Min. CRM Drain to Source Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge VGS = 0V, IS = -30A IF = -20A, di/dt = 100A/us.