CRMEGH1505A Description
Features l 150V, 150A D RDS(ON) Typ = 4.4mΩ @ VGS = 10V l Advanced Split Gate Trench Technology l Excellent RDS(ON) and Low Gate Charge s l 100% UIS TESTED! Power MOSFET (TJ = 25°C unless otherwise specified) Symbol Parameter Conditions Min. CRM Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF = 15A, di/dt = 100A/us.