CRMPBL0611A Description
Features l -60V, -10A D RDS(ON) Typ = 15mΩ @ VGS = -10V RDS(ON) Typ = 17.5mΩ @ VGS = -4.5V l Advanced Trench Technology s l Excellent RDS(ON) and Low Gate Charge ic l Lead Free n l 100% UIS TESTED! Power MOSFET (TJ = 25°C unless otherwise specified) Symbol Parameter Conditions Min. CRM Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Body Diode Reverse Recovery Time Body...