CRTD370P10L Description
华润微电子(重庆)有限公司 CRTD370P10L Trench P-MOSFET -100V, 31mΩ, -34A.
CRTD370P10L Key Features
- Uses CRM(CQ) advanced Trench MOS technology
- Extremely low on-resistance RDS(on)
- Excellent QgxRDS(on) product(FOM)
- Qualified according to JEDEC criteria