H11B1 Overview
Key Specifications
Package: DIP
Mount Type: Through Hole
Pins: 6
Max Operating Temp: 100 °C
Description
The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Package Outline Schematic Note: Different bending options available.
Key Features
- High isolation 5000 VRMS
- CTR flexibility available see order information
- DC input with transistor output
- Temperature range
- 55 °C to 100 °C
