Description
The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option.
Features
- High isolation 5000 VRMS.
- CTR flexibility available see order information.
- DC input with transistor output.
- Temperature range - 55 °C to 100 °C.
- Regulatory Approvals.
- UL - UL1577 (E364000).
- VDE - EN60747-5-5(VDE0884-5).
- CQC.
- GB4943.1, GB8898.
- IEC60065, IEC60950.
H11B1 Datasheet
