Motorola H11B1
The H11B1 and H11B3 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applications requiring high output current (IC) at low LED input currents (IF).APPLICATIONS
● Appliances, Measuring Instruments● I/O Interfaces for Computers
● Programmable Controllers
● Interfacing and coupling systems of different potentials and impedances
● Solid State Relays
● Portable Electronics
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Rating INPUT LED Reverse Voltage Forward Current — Continuous LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C OUTPUT DETECTOR Collector–Emitter Voltage Emitter–Base Voltage Collector–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(2) Storage Temperature Range(2) VISO PD TA Tstg 7500 250 2.94 – 55 to +100 – 55 to +150 Vac(pk) mW mW/°C °C °C VCEO VEBO VCBO IC PD 25 7 30 100 150 1.76 Volts Volts Volts mA mW mW/°C...