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PTP73010T20 Datasheet Phototransistor

Manufacturer: CT Micro

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General Description

The PTP73010T20 is silicon NPN Phototransistor The device has wide spectral sensitivity range from 400 to 1100nm.

Package Outline Schematic Collector Emitter CT Micro Proprietary & Confidential Page 1 Rev 3 Jun, 2018 PTP73010T20 SMD Type Phototransistor Absolute Maximum Rating at 250C Symbol Parameters IC Collector Current BVCEO Collector-Emitter Voltage BVECO Emitter-Collector Voltage Topr Operating Temperature Tstg Storage Temperature Tsol Soldering Temperature Pto Total Power Dissipation Optical Characteristics Symbol Parameters  Spectral Bandwidth P Peak Sensitivity θ1/2 View Angle at X axis View Angle at Y axis Test Conditions - VCE=5V Electrical Characteristics Symbol Parameters ICEO Dark Current VCE(sat) Collector-Emitter Saturation Voltage IC Collector Light Current CT Terminal Capacitance Test Conditions Ee=0mW /cm2 VCE=20V Ee=1mW /cm2 IC=0.9mA Ee=1mW /cm2 P=940nm, VCE=5V Ee=0mW /cm2 f=1MHz ,VCE=5V Ratings 20 35 5 -40 ~ +85 -40 ~ +100 260 150 Units mA V V 0C 0C 0C mW Notes 1 2 3 Min Typ Max Units Notes 400 - 1100 nm - 820 - nm - 52.5 deg 4 - 57.5 - Min Typ Max Units Notes - - 100 nA - - 0.4 V 0.90 1.60 - mA - 3.80 - pF CT Micro Proprietary & Confidential Page 2 Rev 3 Jun, 2018 PTP73010T20 SMD Type Phototransistor Switching Characteristics Symbol Parameters tr Rise Time tf Fall Time ton Turn on Delay Time toff Turn off Delay Time Test Conditions Vce = 5V, RL = 100Ω IC=1.0mA Min Typ Max Units Notes -6- -7µs 5 - 11 - - 7.9 - Notes: 1 : Test conditions : IC=100μA, Ee=0mW/cm2.

2 : Test conditions : IE=100μA, Ee=0mW/cm2.

Key Features

  • Small double-end package.
  • High photo sensitivity.
  • High reliability.
  • Spectral range of sensitivity: 400-1100nm.
  • Fast Response time.
  • RoHS compliance.

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