PTP81608T08 Datasheet (CT Micro)

Description

The PTP81608T08 is silicon NPN Phototransistor The device has wide spectral sensitivity range from 400 to 1100nm. Package Outline Schematic Emitter Collector CT Micro Proprietary & Confidential Page 1 Rev 0(Preliminary) Jan, 2019 PTP81608T08 SMD Type Phototransistor Absolute Maximum Rating at 250C Symbol Parameters IC Collector Current BVCEO Collector-Emitter Voltage BVECO Emitter-Collector Voltage Topr Operating Temperature Tstg Storage Temperature Tsol Soldering Temperature Pto Total Power Dissipation Optical Characteristics Symbol Parameters - Spectral Bandwidth - P θ1/2 Peak Sensitivity View Angle Test Conditions - VCE=5V Symbol Parameters ICEO Dark Current VCE(sat) Collector-Emitter Saturation Voltage IC Collector Light Current CT Terminal Capacitance Test Conditions Ee=0mW /cm2 VCE=20V Ee=1mW /cm2 IC=0.3mA Ee=1mW /cm2 - P=940nm, VCE=5V Ee=0mW /cm2 f=1MHz ,VCE=5V Ratings 20 35 5 -40 ~ +85 -40 ~ +100 260 150 Units mA V V 0C 0C 0C mW Notes 1 2 3 Min Typ Max Units Notes 400 - 1100 nm - 820 - nm - 55 - deg Min Typ Max Units Notes - - 100 nA - - 0.4 V 0.30 0.60 - mA 4 - 2.35 - pF CT Micro Proprietary & Confidential Page 2 Rev 0(Preliminary) Jan, 2019 PTP81608T08 SMD Type Phototransistor Switching Characteristics Symbol Parameters tr Rise Time tf Fall Time ton Turn on Delay Time toff Turn off Delay Time Notes: 1 : Test conditions : IC=100μA, Ee=0mW/cm2.