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PTP81608T08 Datasheet SMD Type Phototransistor

Manufacturer: CT Micro

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Datasheet Details

Part number PTP81608T08
Manufacturer CT Micro
File Size 0.97 MB
Description SMD Type Phototransistor
Download Download datasheet PTP81608T08 Download (PDF)

General Description

The PTP81608T08 is silicon NPN Phototransistor The device has wide spectral sensitivity range from 400 to 1100nm.

Package Outline Schematic Emitter Collector CT Micro Proprietary & Confidential Page 1 Rev 0(Preliminary) Jan, 2019 PTP81608T08 SMD Type Phototransistor Absolute Maximum Rating at 250C Symbol Parameters IC Collector Current BVCEO Collector-Emitter Voltage BVECO Emitter-Collector Voltage Topr Operating Temperature Tstg Storage Temperature Tsol Soldering Temperature Pto Total Power Dissipation Optical Characteristics Symbol Parameters  Spectral Bandwidth P θ1/2 Peak Sensitivity View Angle Test Conditions - VCE=5V Electrical Characteristics Symbol Parameters ICEO Dark Current VCE(sat) Collector-Emitter Saturation Voltage IC Collector Light Current CT Terminal Capacitance Test Conditions Ee=0mW /cm2 VCE=20V Ee=1mW /cm2 IC=0.3mA Ee=1mW /cm2 P=940nm, VCE=5V Ee=0mW /cm2 f=1MHz ,VCE=5V Ratings 20 35 5 -40 ~ +85 -40 ~ +100 260 150 Units mA V V 0C 0C 0C mW Notes 1 2 3 Min Typ Max Units Notes 400 - 1100 nm - 820 - nm - 55 - deg Min Typ Max Units Notes - - 100 nA - - 0.4 V 0.30 0.60 - mA 4 - 2.35 - pF CT Micro Proprietary & Confidential Page 2 Rev 0(Preliminary) Jan, 2019 PTP81608T08 SMD Type Phototransistor Switching Characteristics Symbol Parameters tr Rise Time tf Fall Time ton Turn on Delay Time toff Turn off Delay Time Notes: 1 : Test conditions : IC=100μA, Ee=0mW/cm2.

2 : Test conditions : IE=100μA, Ee=0mW/cm2.

Key Features

  • Small double-end package.
  • High photo sensitivity.
  • High reliability.
  • Spectral range of sensitivity: 400-1100nm.
  • Fast Response time.
  • RoHS compliance.

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