PTP81708T06 Datasheet (CT Micro)

Description

The PTP81708T06 is silicon NPN Phototransistor The device has wide spectral sensitivity range from 400 to 1100nm. Package Outline Schematic Emitter Collector CT Micro Proprietary & Confidential Page 1 Rev 0(Preliminary) Sep, 2017 PTP81708T06 SMD Type Phototransistor Absolute Maximum Rating at 250C Symbol Parameters IC Collector Current BVCEO Collector-Emitter Voltage BVECO Emitter-Collector Voltage Topr Operating Temperature Tstg Storage Temperature Tsol Soldering Temperature Pto Total Power Dissipation Optical Characteristics Symbol Parameters - Spectral Bandwidth - P Peak Sensitivity θ1/2 View Angle Test Conditions - VCE=5V Symbol Parameters ICEO Dark Current VCE(sat) Collector-Emitter Saturation Voltage IC Collector Light Current CT Terminal Capacitance Test Conditions Ee=0mW /cm2 VCE=20V Ee=1mW /cm2 IC=0.3mA Ee=1mW /cm2 - P=940nm, VCE=5V Ee=0mW /cm2 f=1MHz ,VCE=5V Ratings 20 35 5 -40 ~ +85 -40 ~ +100 260 150 Units mA V V 0C 0C 0C mW Notes 1 2 3 Min Typ Max Units Notes 400 - 1100 nm - 820 - nm - 65 - deg Min Typ Max Units Notes - - 100 nA - - 0.4 V 0.3 0.8 - mA - 2.45 - pF CT Micro Proprietary & Confidential Page 2 Rev 0(Preliminary) Sep, 2017 PTP81708T06 SMD Type Phototransistor Switching Characteristics Symbol Parameters tr Rise Time tf Fall Time ton Turn on Delay Time toff Turn off Delay Time Test Conditions Vce = 5V, RL = 100Ω IC=1.0mA Min Typ Max Units Notes -6- -7µs 4 - 11 - - 7.9 - Notes: 1 : Test conditions : IC=100μA, Ee=0mW/cm2.