PTP81708T06 - Phototransistor

Description

The PTP81708T06 is silicon NPN Phototransistor The device has wide spectral sensitivity range from 400 to 1100nm.

Features

Small double-end package.
High photo sensitivity.
High reliability.
Spectral range of sensitivity: 400-1100nm.
Fast Response time.
RoHS compliance.

CT Micro

📥 Download Datasheet

Datasheet Details

Part number	PTP81708T06
Manufacturer	CT Micro
File Size	900.60 KB
Description	Phototransistor
Datasheet	PTP81708T06 Datasheet
Additional preview pages of the PTP81708T06 datasheet.

📁 Similar Datasheet

PTP02N03N - 30V N-Channel MOSFET (PIP)
PTP03N04N - 40V N-Channel MOSFET (PIP)
PTP03N06NB - 60V N-Channel MOSFET (PIP)
PTP04N04N - 40V N-Channel MOSFET (PIP)
PTP04N08N - 80V N-Channel MOSFET (PIP)
PTP07N80 - 800V N-Channel MOSFET (PIP)
PTP08N06N1 - 60V N-Channel MOSFET (PIP)
PTP08N08NA - 85V N-Channel MOSFET (PIP)
PTP10N80 - 800V N-Channel MOSFET (PIP)
PTP11N45 - 430V N-Channel MOSFET (PIP)

Other Datasheets by CT Micro

PTP81608T08 - SMD Type Phototransistor
PTP83010BT20 - Phototransistor
PTP83015BT12 - Phototransistor
PTP83016BT24 - Phototransistor
PTP83216BT18 - SMD Type Phototransistor
PTP73010T20 - Phototransistor

Full PDF Text Transcription

Click to expand full text

Features  Small double-end package  High photo sensitivity  High reliability  Spectral range of sensitivity: 400-1100nm  Fast Response time  RoHS compliance Applications  Infrared sensor  Infrared Touch Panel Solutions PTP81708T06 SMD Type Phototransistor Description The PTP81708T06 is silicon NPN Phototransistor The device has wide spectral sensitivity range from 400 to 1100nm.

Published: May 20, 2020 |