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PTP83010BT20 Datasheet Phototransistor

Manufacturer: CT Micro

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General Description

The PTP83010BT20 is silicon NPN Phototransistor housed in a miniature SMD package.

The device comes with a superior filtering for visible light by utilizing special black molding compound.

Package Outline Schematic Collector Emitter CT Micro Proprietary & Confidential Page 1 Rev 1 Jan, 2015 PTP83010BT20 SMD Type Phototransistor with Daylight Filter Absolute Maximum Rating at 250C Symbol Parameters IC Collector Current BVCEO Collector-Emitter Voltage BVECO Emitter-Collector Voltage Topr Operating Temperature Tstg Storage Temperature Tsol Soldering Temperature Pto Total Power Dissipation Optical Characteristics Symbol Parameters  Spectral Bandwidth P Peak Sensitivity θ1/2 View Angle at X axis View Angle at Y axis Test Conditions - VCE=5V Electrical Characteristics Symbol Parameters ICEO Dark Current VCE(sat) Collector-Emitter Saturation Voltage IC Collector Light Current CT Terminal Capacitance Test Conditions Ee=0mW /cm2 VCE=20V Ee=1mW /cm2 IC=0.2mA Ee=1mW /cm2 P=940nm, VCE=5V Ee=0mW /cm2 f=1MHz ,VCE=5V Ratings 20 35 5 -40 ~ +85 -40 ~ +100 260 150 Units mA V V 0C 0C 0C mW Notes 1 2 3 Min Typ Max Units Notes 700 - 1100 nm - 820 - nm - 52.5 deg 4 - 57.5 - Min Typ Max Units Notes - - 100 nA - - 0.4 V 0.80 - 2.40 mA - 3.80 - pF CT Micro Proprietary & Confidential Page 2 Rev 1 Jan, 2015 PTP83010BT20 SMD Type Phototransistor with Daylight Filter Switching Characteristics Symbol Parameters tr Rise Time tf Fall Time ton Turn on Delay Time toff Turn off Delay Time Test Conditions Vce = 5V, RL = 100Ω IC=1.0mA Min Typ Max Units Notes -6- -7µs 5 - 11 - - 7.9 - Notes: 1 : Test conditions : IC=100μA, Ee=0mW/cm2.

Overview

PTP83010BT20 SMD Type Phototransistor with Daylight Filter.

Key Features

  • Small double-end package.
  • High photo sensitivity.
  • High reliability.
  • Spectral range of sensitivity: 700-1100nm.
  • Fast Response time.
  • RoHS compliance.

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