Datasheet4U Logo Datasheet4U.com

3429DE - Dual P-Channel MOSFET

Datasheet Summary

Description

The uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS.
  • ID.
  • RDS(ON)( at VGS=-4.5V).
  • RDS(ON)( at VGS=-2.5V).
  • RDS(ON)( at VGS=-1.8V) -20V -30A ＜19 mohm ＜26 mohm ＜45 mohm.
  • Trench Power LV MOSFET technology.
  • High density cell design for Low RDS(ON).
  • High Speed switching.

📥 Download Datasheet

Datasheet preview – 3429DE

Datasheet Details

Part number 3429DE
Manufacturer CXW
File Size 1.52 MB
Description Dual P-Channel MOSFET
Datasheet download datasheet 3429DE Datasheet
Additional preview pages of the 3429DE datasheet.

📁 Similar Datasheet

  • 3429-6203 - HEADER CONNECTOR (3M Interconnect Solutions)
  • 3429-xxxx - HEADER CONNECTOR (3M Interconnect Solutions)
  • 3421 - HALL-EFFECT/ DIRECTION-DETECTION SENSORS (Allegro MicroSystems)
  • 3422 - HIGH PERFORMANCE DUAL BIPOLAR OPERATINAL AMPLIFIER (UTC)
  • 3422 - DIRECTION-DETECTION SENSORS (Allegro MicroSystems)
  • 3422S - Super Bright LED Lamp (STANLEY)
  • 3425 - DUAL/ CHOPPER-STABILIZED/ ULTRA-SENSITIVE/ BIPOLAR HALL-EFFECT SWITCH (Allegro MicroSystems)
  • 3425L - Surface Mount PTC (Littelfuse)
  • 3425L150 - SURFACE MOUNT PTC (Littelfuse)
  • 3425L150 - Surface Mount PTC (Littelfuse)
Other Datasheets by CXW
  • 3426B - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
Dual P-channelEnhancementMode MOSFET DESCRIPTION The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS ● ID ● RDS(ON)( at VGS=-4.5V) ● RDS(ON)( at VGS=-2.5V) ● RDS(ON)( at VGS=-1.
Published: |