3429DE - Dual P-Channel MOSFET

CXW

General Description

The uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Key Features

VDS.
ID.
RDS(ON)( at VGS=-4.5V).
RDS(ON)( at VGS=-2.5V).
RDS(ON)( at VGS=-1.8V) -20V -30A ＜19 mohm ＜26 mohm ＜45 mohm.
Trench Power LV MOSFET technology.
High density cell design for Low RDS(ON).
High Speed switching.

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3429DE dual p-channel mosfet by CXW - Datasheet Preview

Datasheet Details

Part number	3429DE
Manufacturer	CXW
File Size	1.52 MB
Description	Dual P-Channel MOSFET
Datasheet	3429DE Datasheet

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Dual P-channelEnhancementMode MOSFET DESCRIPTION The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS ● ID ● RDS(ON)( at VGS=-4.5V) ● RDS(ON)( at VGS=-2.5V) ● RDS(ON)( at VGS=-1.