Datasheet4U Logo Datasheet4U.com

BSS84N3 - 50V P-CHANNEL MOSFET

Key Features

  • Low gate charge.
  • Excellent thermal and electrical capabilities.
  • Pb-free package BVDSS -50V ID -130mA RDSON@VGS=-5V, ID=-100mA 6Ω(typ) Equivalent Circuit BSS84N3 Outline SOT-23 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Tj=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=-5V Pulsed Drain Current (Note 1) Maximum Power Dissipation @ TA=25℃ Thermal Resistance, Junction-to-Ambient.

📥 Download Datasheet

Datasheet Details

Part number BSS84N3
Manufacturer CYStech Electronics
File Size 281.84 KB
Description 50V P-CHANNEL MOSFET
Datasheet download datasheet BSS84N3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSS84 P-Channel MOSFET JCET
BSS84 P-Channel Vertical D-MOS Transistor GME
BSS84 P-channel transistor NXP
BSS84 SIPMOS Small-Signal Transistor Siemens Semiconductor Group
BSS84 P-Channel MOSFET Fairchild Semiconductor

Other Datasheets by CYStech Electronics

Part Number Description
BSS84KS3 50V P-CHANNEL MOSFET
BSS123N3 N-CHANNEL MOSFET
BSS138C3 50V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. 50V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C465N3 Issued Date : 2009.03.03 Revised Date : 2012.05.18 Page No. : 1/ 8 BSS84N3 Features • Low gate charge • Excellent thermal and electrical capabilities • Pb-free package BVDSS -50V ID -130mA RDSON@VGS=-5V, ID=-100mA 6Ω(typ) Equivalent Circuit BSS84N3 Outline SOT-23 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Tj=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=-5V Pulsed Drain Current (Note 1) Maximum Power Dissipation @ TA=25℃ Thermal Resistance, Junction-to-Ambient Maximum Lead Temperature for Soldering Purpose, 10 s Operating Junction and Storage Temperature Note : 1. Pulse width≤ 10μs, duty cycle≤2%.