BSS84DW Datasheet | Bruckewell Technology

P-Channel Enhancement Mode MOSFET Features l Low on-resistance l High-speed switching l Drive circui ts can be simple l Parallel use is easy Typical Applications l P-channel enhancement mode effect transistor l Switching application Mechanical Data l Case: SOT-363 l Molding pound, UL Flammability Classification Rating 94V-0 l Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208 Ordering Information Part Number BSS84DW Package SOT-363 Shipping 3000pcs / Tape & Reel BSS84DW SOT-363 Marking Code K84 Maximum Ratings (@TA=25℃ unless otherwise specified) Parameter Symbol Drain-Source Voltage VDSS Gate -Source Voltage Continuous Drain Current (NOTE1) Power Dissipation (NOTE1) VGSS ID PD Value -50 ±12 -130 0.3 Units V V m A W Thermal Characteristics Parameter Thermal Resistance Junction to Ambient Air Operating Junction Temperature Range Storage Temperature Range Symbol RθJA Tj TSTG Limits 417 -55 to +150 -55 to +150 Unit ℃/W ℃ ℃ P-Channel Enhancement Mode MOSFET Electrical Characteristics (@TA=25℃ unless otherwise specified) Symbol Parameter...