BSS84DW Datasheet | H&M Semiconductor

SOT-363 Plastic-Encapsulate MOSFETs BSS84DW P-CHANNEL MOSFET V(BR)DSS -5 V RDS(on)MAX Ω@-10V Ω@ -5V -0.3A DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. 627 FEATURE z Energy Efficient z Low Threshold Voltage z High-speed Switching z Miniature Surface Mount Package Saves Board Space APPLICATION z DC- DC converters,load switching, power management in portable and battery- powered products such as puters, printers, cellular and cordless telephones. MARKING Equivalent Circuit MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (note 1) @tp <10 μs Power Dissipation Thermal Resistance from Junction to Ambient (note 2) Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD RθJA TJ TSTG Maximum Lead Temperature for Soldering Purposes , Duration TL for 5 Seconds Value -5 ±20 -0.3 -0. 225 556 150 -55~+150 Unit V V A A m W ℃/W ℃ ℃ ℃ MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS...